Semipower Participated in Power Network's 2016 China Engineer Tour Training Conference
On November 19, 2016, the "Power Network's 31st Annual Event - and 2016 Chinese Engineer Tour Training Conference" hosted by Power Network was grandly held at the Marco Polo Hotel in She...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.9mΩ)@Ves=10VLow Gate Charge (Typ 50nC)lmproved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drives
SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.8mΩ)@VGS=10VLow Gate Charge (Typ 78nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
The Third Meeting of JEDEC JC-14 Committee Was Successfully Held
The third group meeting of JEDEC JC-14 was held from November 17 to 18, 2016, at the Fifth Research Institute of Electronics of the Ministry of Industry and Information Technology in Guangzhou. Semipo...
SW038R10VS
FeaturesHigh ruggednessLow RosN (Typ 5.0mΩ)@Ves=4.5VRosc» (Typ 3.6mΩ)@Ves-10VLow Gate Charge (Typ 71nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery ...
SW16N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 57nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R68E7T
FeaturesHigh ruggednessLow Rosom (Typ 7.1mΩ)@VGS=10VLow Gate Charge (Typ 87nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, InverterG...
American ITC Company Visits Semipower
On November 15, 2016, American ITC technical expert Austin and ITC technical support Li Yang visited Semipower Power Device Test Application Center for technical exchanges and new test technology trai...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.4mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW12N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.9Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 75nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW12N70D
N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 0.75Ω)@VGS=10V⚫ Low Gate Charge (Typ 47nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche T...
Semipower Debuted at IC CHINA 2016
From November 8 to 10, 2016, the 14th China International Semiconductor Expo and Summit Forum (IC China2016) was held at the Shanghai New International Expo Center. The "IC CHINA" exhibition...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 6.0mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.6mΩ)@VGS=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
