SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW7N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW066R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
Scholars and Experts from Northwestern Polytechnical University Visited Semipower for Visits and Exchanges
At the beginning of the new year, Semipower’s school-enterprise cooperation with universities has also kicked off a new chapter.On February 10, 2017, Mr. Wang Jiabin, General Manager of Northwestern ...
SW036R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 3.8mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW2N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.0Ω)@VGS=10VLow Gate Charge (Typ 9.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW062R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.2mΩ)@VGS=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
Semipower President Luo Yi Was Invited to Visit a Well-Known Korean Power Device Manufacturer
On December 22, 2016, Mr. Luo Yi, President of Semipower, as a technical committee member of China Semiconductor Standardization, was invited by Korean power device manufacturers to visit South Korea ...
SW038R10VS
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Ves=4.5V(Typ 3.9mΩ)@Ves=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW6N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.35Ω)@VGS=10VLow Gate Charge (Typ 22nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.8mΩ)@VGS=10VLow Gate Charge (Typ 102nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Semipower Successfully Passed the BYD Audit Team Supplier Audit
On December 25, 2016, Semipower successfully passed the SQE supplier system audit of BYD's Shenzhen headquarters. Previously, Semipower has supplied several series of products to BYD for many year...
SW050R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.7mΩ)@Ves=10VLow Gate Charge (Typ 51nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous Rectification,Li Battery Protect Board, Motor Drives
SW050R10E8S
FeaturesHigh ruggednessLow Ros (Typ 5.7mA)@Ves=10VLow Gate Charge (Typ 51nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW6N70P2
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.6Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
