SW230R10VS
FeaturesHigh ruggednessLow RosoN (Typ 21.6mΩ)@Vas-4.5V(Typ 17.6mΩ)@Ves=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Pro...
SW7N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.5mΩ)@VGS=10VLow Gate Charge (Typ 99nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
Shenzhen Jinruixian Inspection Team Visited Semipower
On September 22, 2016, Shenzhen Jinruixian Digital Technology Co., Ltd. Vice President Ding Zhiyong, Hardware Center Director Zhong Jun, and Purchasing Manager Ganmei visited Semipower for supplier qu...
SW230R10VS
FeaturesHigh ruggednessLoW RoSoN (Typ 21mQ)@Ves-4.5VRosN (Typ 17mQ)@Ves=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Prote...
SW7N70DA
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.7mΩ)@VGS=10VLow Gate Charge (Typ 127nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Huawei Device Department Leaders Visited Semipower for On-Site Review
On September 14 and September 22, 2016, Dai Yufeng, director of the device laboratory of Huawei's device department, and Ni Rinbo, manager of the energy and comprehensive device department, visite...
SW072R10VS
FeaturesHigh ruggednessLow RosoN (Typ 9.5mΩ)@Ves=4.5V(Typ 7.2mΩ)@Vas=10VLow Gate Charge (Typ 49nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW6N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW076R68E7T
SW6N70DA
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
The JEDEC JC-14 Committee Officially Authorized the Establishment of the China Task Force
From July 21st to 22nd, 2016, the JEDEC JC-14 China Task Force Working Conference was led by the Fifth Institute of Electronics of the Ministry of Industry and Information Technology and Huawei Techno...
SW038R13E8S
FeaturesHigh ruggednessLow Ros (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 151nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW062R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 100nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
