SW420R20ES
FeaturesHigh ruggednessLow RosoN (Typ 44mQ)@Ves=10VLow Gate Charge (Typ 17nC)improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW6N80MA
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW086R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.6mΩ)@VGS=10VLow Gate Charge (Typ 66nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW10N80D
N-channel Enhanced mode TO-220F MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.0Ω)@VGS=10V⚫ Low Gate Charge (Typ 55nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Application:LED, Char...
Nobel Prize Winner Professor Shuji Nakamura Officially Becomes Senior Technical Consultant of Xi'an Semipower Electronic Technology Company
From July 27 to 29, 2015, Xi'an Semipower Electronic Technology Co., Ltd. invited Professor Shuji Nakamura, the Nobel Prize winner in physics, to visit Xi'an through its industrial partners fo...
SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.9mΩ)@VGS=10VLow Gate Charge (Typ 78nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW7N80D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Salcomp's Global Technical Director Visits Semipower
From June 24 to July 1, 2015, Mr. Liu Yaohua, Salcomp's global technical director, visited Semipower. He visited the Semipower Test Application Center and gave full recognition. At the same time, ...
SW058R72E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Notice on the Xi'an Speech of Mr. Shuji Nakamura, Winner of the '2014 Nobel Prize in Physics'
Since Xi'an Semipower Electronic Technology Co., Ltd. joined the LED Standards Development Committee, it has undertaken some project standard formulation and revision work. In the process, the com...
SW7N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.23Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
2014 China Semiconductor Power Device High Reliability Technology Seminar Was Held Grandly
The "2014 China Semiconductor Power Device High Reliability Technology Seminar" was hosted by the Discrete Device Branch of the China Semiconductor Enterprises Association and jointly organi...
SW058R72E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 109nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW6N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Shi Kangdu, Deputy Director of Xi'an High-Tech Development Zone, Went to Chippower for Investigation
On September 19, Shi Kangdu, deputy director of Xi'an High-tech Development Zone, was invited to Semipower for investigation.Semipower President Mr. Luo Yi and Deputy General Manager Ms. Li Linfei...
