SW3N90P
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Semipower Participated in the Jedec JC-14 China TG Establishment and First Working Meeting as the First Batch of JC-14 China TG Members
The establishment and first working meeting of JEDEC JC-14 China TG was successfully held on March 18 at the Shenzhou Bairuida Hotel in Bantian, Shenzhen.JEDEC Solid State Technology Association is th...
SW062R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.0mΩ)@VGS=10VLow Gate Charge (Typ 141nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW9N90P
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R08E8T
FeaturesHigh ruggednessLowRDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 130nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW6N90M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.8Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW6N90D
▍ N-channel Enhanced mode TO-220F/TO-262N MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.8Ω)@VGS=10V⚫ Low Gate Charge (Typ 42nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicatio...
SW070R08E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.2mΩ)@VGS=10VLow Gate Charge (Typ 109nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Shenzhen Skyworth Review Team Visited Semipower
On March 7, 2016, a group of five people including Tao Haiyang, manager of the component development office of Shenzhen Skyworth-RGB Electronics Co., Ltd., and Zhao Zhe, audit supervisor of the suppli...
SW068R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 128nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
Semipower Luo Yi: Turning Ideas into Products Requires More Perseverance
Few people know that the chargers of the mobile phone brands we use, such as Samsung, Huawei, 0PPO, Meizu and other brands, all use the independent brand SAMWIN power devices of Xi'an Semipower El...
SW078R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 128nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
The 13th LED Driver and Intelligent Control Technology Seminar Concluded in Shenzhen
Dabit News: On October 24, the conference hosted by Dabit Information and hosted by Semiconductor Device Application was successfully held at the Marco Polo Hotel in Shenzhen. This seminar mainly focu...
SW070R08E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.6mΩ)@VGS=10VLow Gate Charge (Typ 101nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Semipower Cup 2014 Power Network Community Annual Review
Semipower cooperated with Power Network to carry out an inventory and selection of the posts and influential figures in 2014 according to the top ten awards. There are a total of ten awards in this ev...
