SW9N90P
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R08E8T
FeaturesHigh ruggednessLowRDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 130nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW6N90M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.8Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW6N90D
▍ N-channel Enhanced mode TO-220F/TO-262N MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.8Ω)@VGS=10V⚫ Low Gate Charge (Typ 42nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicatio...
SW070R08E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.2mΩ)@VGS=10VLow Gate Charge (Typ 109nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Shenzhen Skyworth Review Team Visited Semipower
On March 7, 2016, a group of five people including Tao Haiyang, manager of the component development office of Shenzhen Skyworth-RGB Electronics Co., Ltd., and Zhao Zhe, audit supervisor of the suppli...
SW068R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 128nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
Semipower Luo Yi: Turning Ideas into Products Requires More Perseverance
Few people know that the chargers of the mobile phone brands we use, such as Samsung, Huawei, 0PPO, Meizu and other brands, all use the independent brand SAMWIN power devices of Xi'an Semipower El...
SW078R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 128nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
The 13th LED Driver and Intelligent Control Technology Seminar Concluded in Shenzhen
Dabit News: On October 24, the conference hosted by Dabit Information and hosted by Semiconductor Device Application was successfully held at the Marco Polo Hotel in Shenzhen. This seminar mainly focu...
SW070R08E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.6mΩ)@VGS=10VLow Gate Charge (Typ 101nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Semipower Cup 2014 Power Network Community Annual Review
Semipower cooperated with Power Network to carry out an inventory and selection of the posts and influential figures in 2014 according to the top ten awards. There are a total of ten awards in this ev...
SW078R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 8.4mΩ)@VGS=10VLow Gate Charge (Typ 98nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
Minister Miao Wei of the Ministry of Industry and Information Technology Visited Shaanxi's Outstanding Representative Integrated Circuit Enterprises
In the second quarter of 2014, Shaanxi integrated circuit enterprises selected eight star enterprises in Xi'an to form a group to receive a cordial interview with Minister Miao Wei of the Ministry...
SW075R08E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 8mΩ)@VGS=10VLow Gate Charge (Typ 95nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverterG...
