SW6N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Shi Kangdu, Deputy Director of Xi'an High-Tech Development Zone, Went to Chippower for Investigation
On September 19, Shi Kangdu, deputy director of Xi'an High-tech Development Zone, was invited to Semipower for investigation.Semipower President Mr. Luo Yi and Deputy General Manager Ms. Li Linfei...
SW058R75E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW4N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.2Ω)@VGS=10VLow Gate Charge (Typ 12nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW4N80D
N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 3.2Ω)@VGS=10V⚫ Low Gate Charge (Typ 19nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested...
Semipower Shenzhen Sales Team Conducts Technical Training
On September 16, the Semipower Shenzhen sales team, led by Vice President Mr. Xu Ge, Deputy General Managers Mr. Huang Le, and Mr. Li Xiaoqiang, went to Xi'an Power Device Testing and Application ...
SW046R08E9T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.5mΩ)@VGS=10VLow Gate Charge (Typ 182nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW3N80D
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 3.8Ω)@VGS=10V⚫ Low Gate Charge (Typ 17nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applic...
South Korea's SK Hynix Company Visited Xi'an High-Tech Zone to Conduct Industrial Environment Research
On September 5, 2016, Li Dongjae, Vice President of South Korea's SK hynix, the world's third largest semiconductor DRAM manufacturer, and his delegation were invited by Mr. Luo Yi, General Ma...
SW046R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=10VLow Gate Charge (Typ 183nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
New Environment, New Journey, New Opportunities - Congratulations on the Relocation of Semipower
On August 4, 2016, Semipower held a relocation and unveiling ceremony in the Huanpu Technology Industrial Park. Gao Xiang, Director of the Electronic Information and Software Service Industry Division...
SW062R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=10VLow Gate Charge (Typ 137nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW3N90P
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Semipower Participated in the Jedec JC-14 China TG Establishment and First Working Meeting as the First Batch of JC-14 China TG Members
The establishment and first working meeting of JEDEC JC-14 China TG was successfully held on March 18 at the Shenzhou Bairuida Hotel in Bantian, Shenzhen.JEDEC Solid State Technology Association is th...
SW062R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.0mΩ)@VGS=10VLow Gate Charge (Typ 141nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
