SW4N70L
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.8Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW085R68E7T
Semipower Super-Junction Mos Product SW7N65K Won the 2016 IC Design Achievement Award
On March 14, 2016, the 2016 Greater China IC Design Achievement Award Ceremony was held grandly at the Shanghai Guofeng Hotel. This award conducts an annual industry status survey for IC design compan...
SW043R15E8S
FeaturesHigh ruggednessLow RoscN (Typ 3.6mΩ)@Ves=10VLow Gate Charge (Typ 162nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
SW7N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.45Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW086R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.2mΩ)@VGS=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
The 13th China International Semiconductor Expo and Summit Forum
The 13th China International Semiconductor Expo and Summit Forum (IC China 2015) was held from November 11 to 13, 2015 in Hall W5 of Shanghai New International Expo Center. "IC China 2015" t...
SW2800R15ES
FeaturesHigh ruggednessLow RoscN (Typ 208mΩ)@Ves=10VLow Gate Charge (Typ 5.2nC)Improved dv/dt Capability100% Avalanche TestedApplication:TV,LED
SW6N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.3Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.9mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
After Ten Years of Hard Work, We Are in the Same Boat - Congratulations to Xi'an Semipower for Winning Salcomp's
In October 2015, Xi'an Semipower Electronic Technology Co., Ltd. won the "Ten Years Contribution Award" from Salcomp Technology Co., Ltd. This year, only two companies won this honor.Xi&...
SW058R15E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.4mΩ)@Ves=10VLow Gate Charge (Typ 163nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW10N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.86Ω)@VGS=10VLow Gate Charge (Typ 33nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW085R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 10.2mΩ)@VGS=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Semipower-CLP Port Attended the Computer Industry Association Technical Exchange Meeting
On October 13, CLP Port and the Computer Industry Association jointly held the "CLP Port Enters the Computer Industry Association Technical Exchange Meeting" at the Great Wall Group in Shenz...
