SW11N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.33Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
China's Semiconductor Trend is Back on the Rise, Semipower will Focus on the New Energy Automotive Electronics Field
Although China's power semiconductor devices started late, the market size is growing rapidly. According to data from Zhongyan Puhua Industrial Research Institute, it has grown from 190.5 billion ...
China's RFID Market Has Shifted from Blowout to Steady Growth
Judging from the development of China's RFID market, it mainly has the following four characteristics:The overall market growth depends on == projects. RFID can develop rapidly in China, and == pl...
SW030R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
1N5817W~1N5819W
FEATURESMetal silicon junction, majority carrier conductionGuarding for overvoltage protectionLow power loss, high efficiencyHigh current capabilityLow forward voltage dropHigh surge capabilityFor use...
SW4N60TF
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.2Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: Power supplies, adaptorsGeneral DescriptionThis power MOSFET ...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.0mΩ)@VGS=4.5V RDS(ON) (Typ 4.2mΩ)@VGS=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW10N60D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW7N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.53Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Semipower Representatives Join Hands to Participate in IEEE PEAC 2018
On November 4, 2018, the 2nd International Power Electronics Technology and Application Conference and Exposition (2018 IEEE International Power Electronics and Application Conference and Exposition, ...
The Semiconductor Industry is Booming and Market Expectations are Generally Rising
The semiconductor market has been depressed for too long, and the recent improvement in market conditions has made the industry particularly excited."Bankruptcy," "layoffs," and &q...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW025R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.1mΩ)@VGS=4.5V (Typ 2.7mΩ)@VGS=10VLow Gate Charge (Typ 90nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW7N60D
▍ N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.05Ω)@VGS=10V⚫ Low Gate Charge (Typ 30nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Te...
SW7N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.57Ω)@VGS=10VLow Gate Charge (Typ 14.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET...
