N-Channel SGT MOSFET (25V-250V)

Semipower Technology SGT N Channel E MOSFET adopts shielded gate deep trench technology with charge balancing function, which reduces the device's characteristic on-resistance (Rsp) and gate charge (Qg), comprehensively improves the product's on-resistance temperature characteristics, and effectively controls The device's on-resistance increases with temperature, thereby significantly enhancing the device's current capability and impact resistance at high temperatures. This N channel power MOSFET will be more suitable for applications in high temperature and harsh environments.

Types of N-Channel SGT MOSFET (25v-250v)

Part Number	BVDSS_V	ID_A	RDS_ON	QG	Package	Type
SW014R04VLS	40	260	0.0016	97	TOLL	SAMWIN
SW014R04VLS	40	200	0.0023	89	TO-220FB	SAMWIN
SW014R04VLS	40	150	0.0021	89	DFN5*6	SAMWIN
SW050R06VLS	60	70	0.0085	32	DFN5*6	SAMWIN
SW210R06VLS	60	30	0.025	9.7	TO-252,TO-251S	SAMWIN
SW210R06VLS	60	30	0.026	9.8	TO-220FB	SAMWIN
SW210R06VLS	60	8	0.025	10	SOP-8	SAMWIN
SW030R06VLS	60	130	0.0049	68	TO-252	SAMWIN
SW030R06VLS	60	110	0.0041	70	DFN5*6	SAMWIN
SW083R06VLS	60	65	0.0127	22	TO-251	SAMWIN
SW083R06VLS	60	50	0.0126	22	DFN5*6	SAMWIN
SW083R06VLS	60	10	0.013	22	SOP-8	SAMWIN
SW052R06VS	65	90	0.0072	32	DFN5*6	SAMWIN
SW043R08ES	80	135	0.0046	48	TO-263	SAMWIN
SW036R08ES	80	160	0.0035	64	TO-220FB	SAMWIN
SW042R08ES	80	150	0.0044	51	TO-220FB	SAMWIN
SW043R85ES	85	135	0.0049	50	TO-220FB	SAMWIN
SW046R85E8S	85	130	0.0044	56	TO-252	SAMWIN
SW030R85E8S	85	150	0.0033	85	TO-252	SAMWIN
SW023R85E8S	85	200	0.0024	125	TO-220FB,TO-263	SAMWIN
SW010R85E8S	85	350	0.0012	179	TOLL	SAMWIN
SW030R85E8S	85	180	0.0031	86	TO-220FB,TO-263	SAMWIN
SW046R85E8S	85	150	0.0041	48	PTO-252	SAMWIN
SW046R85E8S	85	140	0.0044	55	TO-220,TO-263	SAMWIN
SW054R85E8S	85	130	0.0053	45	TO-220FB,TO-263	SAMWIN
SW050R85E8S	85	130	0.0052	47	TO-220,TO-263	SAMWIN
SW050R85E7S	85	130	0.0045	77	TO-263	SAMWIN
SW050R85E7S	85	130	0.0048	77	TO-220	SAMWIN
SW050R85E8S	85	100	0.0053	44	DFN5*6	SAMWIN
SW094R10VLS	100	60	0.0133	28	DFN5*6	SAMWIN
SW072R10VS	100	90	0.0099	46	TO-251S	SAMWIN
SW038R10VLS	100	125	0.0054	68	DFN5*6	SAMWIN
SW036R10E8S	100	190	0.0038	87	TOLL	SAMWIN
SW034R10ES	100	140	0.0034	87	DFN5*6	SAMWIN
SW046R10ES	100	135	0.0043	63	TO-220FB,TO-263	SAMWIN
SW046R10ES	100	80	0.0045	64	TO-220F	SAMWIN
SW150R10VS	100	43	0.0175	14.4	TO-252	SAMWIN
SW012R10ES	100	325	0.0013	201	TOLL	SAMWIN
SW035R10ES	100	180	0.0035	83	TO-263	SAMWIN
SW046R10ES	100	115	0.0041	65	DFN5*6	SAMWIN
SW034R10ES	100	180	0.0034	82	TO-220FB,TO-263	SAMWIN
SW064R10VLS	100	110	0.0072	58	TO-252	SAMWIN
SW064R10VLS	100	15	0.0081	58	SOP-8	SAMWIN
SW030R10E8S	100	230	0.0025	114	TOLL	SAMWIN
SW064R10VLS	100	95	0.0069	58	DFN5*6	SAMWIN
SW020R10E8S	100	270	0.0018	162	TOLL	SAMWIN
SW020R10E8S	100	240	0.0022	164	TO-263,TO-220FB,TO-263-7	SAMWIN
SW030R10E8S	100	190	0.0029	125	TO-220,TO-263,TO-263-7	SAMWIN
SW036R10E8S	100	175	0.0038	85	TO-220,TO-263,TO-263-7	SAMWIN
SW038R10VS	100	150	0.0053	70	TO-220FB	SAMWIN
SW050R10E8S	100	140	0.0057	51	TO-220	SAMWIN
SW050R95E8S	100	130	0.0059	50	TO-220,TO-263	SAMWIN
SW038R10VS	100	128	0.005	71	DFN5*6	SAMWIN
SW050R95E8S	100	110	0.0054	48	PTO-252	SAMWIN
SW050R95E8S	100	100	0.006	48	TO-252	SAMWIN
SW050R95E8S	100	95	0.0058	50	DFN5*6	SAMWIN
SW072R10VS	100	80	0.0095	49	DFN5*6	SAMWIN
SW230R10VS	100	45	0.0216	15	TO-220FB	SAMWIN
SW230R10VS	100	40	0.021	15	TO-252	SAMWIN
SW072R10VS	100	13	0.0095	49	SOP-8	SAMWIN
SW038R13E8S	135	220	0.0029	151	TO-263-7,TO-263-6,TOLL	SAMWIN
SW038R13E8S-1	135	200	0.0034	156	TO-220FB,TO-263	SAMWIN
SW043R15E8S	150	200	0.0041	154	TO-220FB	SAMWIN
SW043R15E8S	150	260	0.0036	162	TO-263-6,TOLL	SAMWIN
SW2800R15ES	150	6	0.208	5.2	TO-252	SAMWIN
SW058R15E8S	150	160	0.0054	163	TO-220,TO-263	SAMWIN
SW420R20ES	200	24	0.044	17	DFN5*6	SAMWIN

Research & Development of N-Channel SGT MOSFET (25v-250v)

Semipower Technology's excellent chip design of N-Channel SGT MOSFET, combined with advanced packaging technology, improves the system efficiency and power density of MOSFET devices in the power conversion process, while ensuring the impact resistance during the switching process in harsh environments, achieving fast, stable and efficient power supply management and motor control.

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